Abstract: Gate-all-around (GAA) is a promising MOSFET structure to continue scaling down the size of CMOS devices beyond 7 nm technology node. This paper gives an overview of different types of ...
Abstract: Device performance under extended duration illumination is an essential characterization step for any PV technology, because light exposure can produce a variety of effects which influence ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results